3-bits-per-cell 2T32CFE nvTCAM by Angstrom-laminated Ferroelectric Layers with 10¹¹ Cycles of Endurance and 4.92V of Ultra-wide Memory-windows for In-memory-searching

A 3D monolithically embedded ferroelectric nvTCAM has been firstly proposed. To prove the concept, the $2\mathrm{T}32\mathrm{C}_{FE}$ nvTCAM array has been fabricated, which is fully integrated in the standard CMOS technology. 32 ferro-layers can be deposited between metal layers in the back-end-of-line, which effectively reduces $16 \times$ layout overhead. With performance-enhanced angstrom-laminated ferroelectrics, the TCAM shows ultra-wide memory window, 4.94V, and $5 \times 10 ^{4}$ of on/off ratios, with 8-levels-storage in between. Moreover, searching-power only consumes 9.6 $\mu$ W/b in 4.5ns. The endurance achieves 10 ¹¹ cycles for each storage level, and decade-lifetime can be well-predicted at 87.6°C. This work will prove a competitive solution for future in-memory-searching technologies, aiming for super-chip applications in up-coming 1-trillion-transistors era.