Liu, C.Y. - National Cheng Kung University

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Extremely High-κ Hf0.2Zr0.8O2 Gate Stacks Integrated into Ge0.95Si0.05 Nanowire and Nanosheet nFETs Featuring Respective Record Ion per Footprint of 9200μA/μm and Record Ion per Stack of 360μA at VOV=VDS=0.5V

Yi-Chun Liu,Yu-Rui Chen,Yun-Wen Chen,Hsin-Cheng Lin,Wan-Hsuan Hsieh,Chien-Te Tu,Bo-Wei Huang,Wei-Jen Chen,Chun-Yi Cheng,Shee-Jier Chueh,C. W. Liu

2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)pp.1-2, (2023)

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Extremely High-$\kappa $ Hf$_{\text{0.2}}$Zr$_{\text{0.8}}$O$_{\text{2}}$ Gate Stacks Integrated Into Eight Stacked Ge$_{\text{0.95}}$Si$_{\text{0.05}}$ Nanowires and Nanosheets nFETs to Boost $\textit{I}_{{{\textsf{ON}}}}$

Liu C,Yi-Chun Liu,Yun-Wen Chen,Yu-Rui Chen,Hsin-Cheng Lin, Charng-Gan Tu,Bo‐Wei Huang,Liu C

IEEE Transactions on Electron Devicespp.1-7, (2023)

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Engineering Hf$_{\text{0.5}}$Zr$_{\text{0.5}}$O$_{\text{2}}$ Ferroelectric Tunnel Junctions With Amorphous WO$_{\textit{x}}$ Bottom Electrodes Achieving High Remanent Polarization and Record Low-Operating Voltage

Zefu Zhao,Yu-Rui Chen,Yun-Wen Chen,Jer-Fu Wang,Yifan Xing,Ji Wang,Guan-Hua Chen,Jia-Yang Lee,Rachit Dobhal,Liu C

IEEE Transactions on Electron Devicesno. 10 (2023): 5022-5027

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Modulation of C_iss of a 4H-SiC Planar MOSFET With a Shorter Sidewall and a Thicker Gate

Shih-Hsuan Chen,Chih-Lun Liu,Chien-Neng Huang, Hsiang-Min Hsieh,Ping-Kai Chang, Ruei-Ci Wu,Kung-Yen Lee,Chih-Fang Huang

IEEE Electron Device Lettersno. 11 (2023): 1825-1828

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Carrier–Phonon Interaction Induced Large Negative Thermal‐Optic Coefficient at Near Band Edge of Quasi‐2D (PEA) ₂ PbBr ₄ Perovskite

Sheng‐Chan Wu,Chun‐Sheng Wu,Ching‐Hang Chien, Yu‐Wei Zhang,Chung‐Xian Yang,Cheng Liu,Ming‐Hsien Li,Chen‐Fu Lin,Yu‐Hao Wu,Bi‐Hsuan Lin,Yu‐Hsun Chou,Yia‐Chung Chang,

Advanced Functional Materialsno. 25 (2023)

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3-bits-per-cell 2T32CFE nvTCAM by Angstrom-laminated Ferroelectric Layers with 10¹¹ Cycles of Endurance and 4.92V of Ultra-wide Memory-windows for In-memory-searching

E. R. Hsieh,Y. T. Tang,C. R. Liu, S. M. Wang, Y. L. Hsueh, R. Q. Lin,Y. X. Huang,Y. T. Chen

2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)pp.1-2, (2023)

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Fatigue Mechanism of Antiferroelectric Hf_0.1Zr_0.9O₂ Toward Endurance Immunity by Opposite Polarity Cycling Recovery (OPCR) for eDRAM

K.-Y. Hsiang, J.-Y. Lee, Z.-F. Lou,F.-S. Chang,Y.-C. Chen,Z.-X. Li,M. H. Liao,C. W. Liu, T.-H. Hou, P. Su,M. H. Lee

IEEE Transactions on Electron Devicesno. 4 (2023): 2142-2146

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Impact of Trapped Charge Vertical Loss and Lateral Migration on Lifetime Estimation of 3-D NAND Flash Memories

Y. H. Liu, T. C. Zhan, Y. S. Yang, C. C. Hsu,A. C. Liu, W. Lin

IRPSpp.1-6, (2023)

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Yi-Chun Liu,Yu-Rui Chen,Yun-Wen Chen,Hsin-Cheng Lin,Wan-Hsuan Hsieh,Chien-Te Tu,Bo-Wei Huang,Wei-Jen Chen,Chun-Yi Cheng,Shee-Jier Chueh,C. W. Liu

VLSI Technology and Circuitspp.1-2, (2023)

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Erratum: Quantum phase transition in ultrahigh mobility SiGe/Si/SiGe two-dimensional electron system [Phys. Rev. B 99 , 081106(R) (2019)]

M. Yu. Melnikov, A. A. Shashkin, V. T. Dolgopolov,Amy Y. X. Zhu, S. V. Kravchenko,S.-H. Huang,C. W. Liu

Physical Review Bno. 3 (2023)

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