Y. -T. Tang - Dept Elect Engn, Natl Cent Univ

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Ultra-Large Memory Window of 3.8V and 75% Read/Write Speed Improvement through Stressed Alumina and Angstrom- Laminated HfZrO₂

Z-R. Huang,S-M. Wang,C-R. Liu, Y-T. Chen,Y-T. Tsai, Z-K. Chen, C-S. Pai,Y. -T. Tang

2023 SILICON NANOELECTRONICS WORKSHOP, SNWpp.47-48, (2023)

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First-principles Calculations of High Thermal Conductivity in Germanium Carbide Channel Materials

S. -C. Lee,Y. -T. Chen,C. -R. Liu,S. -M. Wang,Y. -T. Tang,F. -S. Chang,Z. -X. Li,K. -Y. Hsiang,M. -H. Lee

arXiv (Cornell University) (2023)

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3-bits-per-cell 2T32CFE nvTCAM by Angstrom-laminated Ferroelectric Layers with 10¹¹ Cycles of Endurance and 4.92V of Ultra-wide Memory-windows for In-memory-searching

E. R. Hsieh,Y. T. Tang,C. R. Liu, S. M. Wang, Y. L. Hsueh, R. Q. Lin,Y. X. Huang,Y. T. Chen

2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)pp.1-2, (2023)

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3-bits-per-cell 2T32CFE nvTCAM by Angstrom-laminated Ferroelectric Layers with 10¹¹ Cycles of Endurance and 4.92V of Ultra-wide Memory-windows for In-memory-searching

E. R. Hsieh,Y. T. Tang,C. R. Liu,S. M. Wang, Y. L. Hsueh, R. Q. Lin,Y. X. Huang,Y. T. Chen

VLSI Technology and Circuitspp.1-2, (2023)

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Superlattice HfO2-ZrO2 based Ferro-Stack HfZrO2 FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 10(9) cycles for Multibit NVM

C. -Y. Liao, Z. -F. Lou,C. -Y. Lin,A. Senapati, R. Karmakar,K. -Y. Hsiang, Z. -X. Li, W. -C. Ray,J. -Y. Lee, P. -H. Chen,F. -S. Chang, H. -H. Tseng,

2022 INTERNATIONAL ELECTRON DEVICES MEETING, IEDM (2022)

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Superlattice HfO2-ZrO2 based Ferro-Stack HfZrO2 FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 10⁹ cycles for Multibit NVM

C.-Y. Liao, Z.-F. Lou,C.-Y. Lin, A. Senapati, R. Karmakar, K.-Y. Hsiang, Z.-X. Li, W.-C. Ray,J.-Y. Lee, P.-H. Chen,F.-S. Chang, H.-H. Tseng,

2022 International Electron Devices Meeting (IEDM)pp.36.6.1-36.6.4, (2022)

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The First Embedded 14nm FeFinFET NVM: 2T1CFE Array as Electrical Synapses and Activations for High-performance and Low-power Inference Accelerators

E R. Hsieh, W. L. Tsai, Y. L. Lin,C. H. Liu, S. S. Chung,Y. T. Tang, J. R. Su, T. P. Chen, S. A. Huang, T. J. Chen, O. Cheng

2021 Symposium on VLSI Technologypp.1-2, (2021)

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The First Embedded 14nm FeFinFET NVM: 2T1C FE Array as Electrical Synapses and Activations for High-performance and Low-power Inference Accelerators

E. R. Hsieh,Wen‐Liang Tsai,Yi-Wei Lin,C. H. Liu,Steve S. Chung,Ying-Tsan Tang, Jiabin Su, T. P. Chen, Sheng‐Yi Huang,T. J. Chen,Osbert Cheng

openalex（2021）

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The First Embedded 14nm FeFinFET NVM: 2T1CFE Array as Electrical Synapses and Activations for High-performance and Low-power Inference Accelerators

E R. Hsieh,W. L. Tsai,Y. L. Lin,C. H. Liu,S. S. Chung,Y. T. Tang, J. R. Su,T. P. Chen, S. A. Huang,T. J. Chen,O. Cheng

2021 Symposium on VLSI Technologypp.1-2, (2021)

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