Die-Level 3-D Integration Technology for Rapid Prototyping of High-Performance Multifunctionality Hetero-Integrated Systems

Electron Devices, IEEE Transactions(2013)

引用 24|浏览11
暂无评分
摘要
We proposed a die-level 3-D integration technology for rapid prototyping of high-performance multifunctionality hetero-integrated systems. Commercially available 2-D chips with different functions and sizes could be processed and integrated in die level. To realize the die-level 3-D integration, fine-sized backside through silicon via (TSV) and novel detachable technologies are developed. In this paper, we demonstrated a prototype 3-D stacked image sensor system using the die-level 3-D integration technology. Three different functional chips of CMOS image sensor, correlated double sampling, and analog-to-digital converter, which were fabricated by different technologies, were processed to form fine-sized backside Cu TSV of 5- μm diameter and metal microbumps in die level. Each chip was sequentially stacked after evaluating the basic function to form a known-good-die 3-D stacked system. The fundamental characteristics of each functional chip were successfully evaluated in the fabricated prototype 3-D stacked image sensor system.
更多
查看译文
关键词
cmos image sensors,analogue-digital conversion,rapid prototyping (industrial),three-dimensional integrated circuits,cmos image sensor,cu,analog-to-digital converter,correlated double sampling,die-level 3-d integration technology,fine-sized backside cu tsv,fine-sized backside through silicon via technology,high-performance multifunctionality heterointegrated systems,prototype 3-d stacked image sensor system,rapid prototyping,size 5 mum,backside through silicon via (tsv),die-level 3-d integration,hetero-integrated system
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要