A Low Area-Overhead and Low Delay Triple-Node-Upset Self-Recoverable Design Based On Stacked Transistors

IEEE Transactions on Device and Materials Reliability(2024)

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摘要
With the aggressive scaling in the feature size of transistors, single-event triple-node-upsets (TNUs) induced by charge sharing in CMOS circuits have become a significant reliability problem. In this paper, based on N-type stacked transistors, a TNU self-recovery latch called LORD-TNU is proposed. Utilizing the stacked transistors to reduce the count of sensitive nodes in the latch. In addition, we use three modules to protect each other. In the event of a soft error in one module, the remaining modules can restore the corrupted module. This design not only saves delay overhead but also minimizes area overhead. Simulation results show that compared with the four typical TNU hardened latches, the proposed LORD-TNU latch reduces area overhead by 49.76%, power consumption by 56.07%, delay by 40.17%, and the power-delay-product (PDP) by 72.56% on average, respectively. Moreover, the robustness of our LORD-TNU latch is confirmed by comprehensive PVT (Process, Voltage, Temperature) and Monte Carlo simulations, demonstrating its stability across a range of process corners, supply voltage, and temperature variations.
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关键词
Circuit reliability,radiation hardening,single-event-upset,stacked transistors,triple-node-upset
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