NVDimm-FE: A High-density 3D Architecture of 3-bit/c 2TnCFE to Break Great Memory Wall with 10 ns of PGM-pulse, 10¹⁰ Cycles of Endurance, and Decade Lifetime at 103 °C

A novel concept of NVDimm-FE has been proposed to replace the DRAM position in the memory hierarchy. A high-density 3D architecture of 3-bit-per-C FE 2-transistors and n-ferroelectric-capacitances (3-bit/c 2TnC FE ) array has been developed as a platform to realize this concept. Our results have shown that 3D 3-bit/c 2TnC FE array achieves 3.1V of the memory window, 62% of the program (PGM) efficiency, 10 ns of PGM-speed at 2.1MV/cm, excellent endurance up to 10 ¹⁰ times for each state of 3-bits per C FE (8 states), and retention for decade-lifetime prediction of the ferroelectric-NVMs at 103 °C. With the assistance of 3D integration of many vertical C FE layers, the 2TnC FE has been proved to be an ultra-high-density candidate of the NVDimm-FE to break the GREAT memory wall and boost high-performance computing efficiency in the future.