A 9-Mb HZO-Based Embedded FeRAM With 10¹²-Cycle Endurance and 5/7-ns Read/Write Using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier

Hf0.5Zr0.5O2(HZO)-based ferroelectric random access memory (FeRAM) is a good candidate for the embedded nonvolatile memory (eNVM) applications because of its high reliability, high speed, good scalability, and process compatibility with logic large-scale integrated circuits (LSIs). However, chal-lenges still exist in designing robust read/write circuits for high reliability and sufficient read yield. This work presents a 9-Mb(8+1-Mb error correcting code (ECC)) HZO-based nonvolatile FeRAM chip with high-performance read and write peripheral circuits. A TiN/HZO/TiN ferroelectric capacitor (FeCAP) is integrated in the back-end-of-line of a 130-nm CMOS process with a 700-nm-diameter capacitor and a mega-level capacity.A temperature-aware ECC-assisted write driver (ECC-WD)is designed to improve the reliability and power efficiency of FeRAM. The offset-canceled sense amplifier (SA) and adummy-based reference generator are designed to tolerate asmall bitline (BL) signal margin and to reduce the read bit-errorrate (BER). Measurement results show 2xremnant polarization(P-r)>30 mu C/cm(2),>10(12)-cycle endurance, 7-ns write and 5-nsread time, sub-3-V operating voltage, and 10-year data retentionat 85(degrees)C