Simulation Study of an Antimony Selenide Solar Cell with Graphene Oxide as Hole Transport Material

This study analyses the photovoltaic(PV) properties of antimonyselenide-based solar structures using a solar cell capacitance simulator(SCAPS-1D). The software was used to improve the PV performance ofSb(2)Se(3)-based solar cells using ZnSe as the bufferlayer and graphene oxide (GO) as the hole transport layer (HTL). Thesolar cell's performance was studied by varying the thickness,doping concentration, and defect density of the HTL and absorber layer.The performance was also studied by varying temperature, series andshunt resistance, and interface defects. Initially, a Sb2Se3/CdS/ITO-based solar cell was simulated with 4.98%efficiency and whose PV parameters agreed with the experimental result.There is an enhancement in solar cell performance by replacing CdSwith ZnSe and adding GO up to a value of 17.36%. Further, optimizingvarious device parameters results in an enhancement of efficiencyby up to 24.50%.