Ultra-high thermal stability InAs/GaAs quantum dot lasers grown on on-axis Si (001) with a record-high continuous-wave operating temperature of 150 & DEG;C

Direct epitaxial growth of group III-V light sources with excellently thermal performance on silicon photonics chips promises low-cost, low-power-consumption, high-performance photonic integrated circuits. Here, we report on the achievement of ultra-high thermal stability 1.3 & mu;m InAs/GaAs quantum dot (QD) lasers directly grown on an on-axis Si (001) with a record-high continuous-wave (CW) operating temperature of 150 & DEG;C. A GaAs buffer layer with a low threading dislocation density (TDD) of 4.3 x 106 cm-2 was first deposited using an optimized three-step growth method by molecular beam epitaxy. Then, an eight-layer QD laser structure with p-type modulation doping to enhance the temperature stability of the device was subsequently grown on the low TDD Si-based GaAs buffer layer. It is shown that the QD laser exhibits the ultra-high temperature stability with a characteristic temperature T0=& INFIN; and T1=& INFIN; in the wide temperature range of 10-75 & DEG;C and 10-140 & DEG;C, respectively. Moreover, a maximum CW operating temperature of up to 150 & DEG;C and a pulsed operating temperature of up to 160 & DEG;C are achieved for the QD laser. In addition, the QD laser shows a high CW saturation power of 50 mW at 85 & DEG;C and 19 mW at 125 & DEG;C, respectively.