Monolithic Integration Of A 5-Mhz Gan Half-Bridge In A 200-V Gan-On-Soi Process: Programmable Dv/Dt Control And Floating High-Voltage Level-Shifter

This paper presents key building blocks of a monolithic GaN half-bridge solution: 1) a binary-weighted digitally-controlled segmented gate-driver, offering slew-rate control; 2) a high-voltage floating level-shifter with glitch prevention; and 3) a monolithic half-bridge with integrated fixed-strength gate-drivers. Together, they facilitate on-chip active gate-driving, improving the reliability of GaN power ICs. The blocks were fabricated on separate dies using imec's 200 V GaN-on-SOI process. A controllable dv(DS)/dt from 68 V/ns to 112 V/ns at room temperature is achieved using the segmented gate-driver. An oscillation-free v(DS) switching of the half-bridge at 200 V and 5 MHz is demonstrated through experimental results.