Peter Moens

Peter Moens received the Ph.D. degree in solid-state physics from the University of Ghent, Ghent, Belgium, in 1993. At onsemi, he is/was responsible for the development of 600+V GaN-based power devices from 2009 to 2019. Since 2019, he has been working on SiC MOSFETs. He is/was a member of the Technical Program Committee of IEDM, ISPSD, IRPS, CSMANTECH, ICSCRM, IRW, ESSDERC, and ESREF. He was the General Chair of ISPSD 2012. He authored and coauthored over 185 publications in peer-reviewed journals or conferences and 15 invited articles. He presented tutorials on smart power reliability and GaN power-device reliability at IRPS and ISPSD and contributed to two books chapters on GaN power devices and reliability. He is an inductee of the ISPSD International Hall of Fame. He holds 54 U.S. patents. Dr. Moens was a recipient of four best paper awards.