A Novel Accurate And Robust Technique In After-Etch Overlay Metrology Of 3d-Nand'S Memory Holes

Yaobin Feng,Dean Wu, Pandeng Xuan, Pavel Izikson, Payne Qi, Huanian You, Yvon Chai, Jan Jitse Venselaar,Giulio Bottegal,Gonzalo Sanguinetti, Bert Verstraeten, Tjitte Nooitgedagt,Babak Mozooni

METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XXXIV（2020）

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摘要

In this work a novel machine learning algorithm is used to calculate the after etch overlay of the memory holes in a 3D-NAND device based on OCD metrology by YieldStar S1375. It is shown that the method can distinguish the overlay signals from the process induced signals in the acquired pupil image and therefore, enables for an overlay metrology approach which is highly robust to process variations. This metrology data is used to characterize and correct the process induced intra-die stress and the DUV scanner application fingerprint.

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关键词

3D-NAND, Metrology, Overlay, Robustness, After-etch, Intra-die stress, In-Device Metrology, DUV scanner, Lithography

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