Snapback-Free Base Resistance Controlled Thyristor With Floating N-Region
IEICE ELECTRONICS EXPRESS(2019)
摘要
An analysis model of snapback voltage for the base resistance controlled thyristor (BRT) is developed in this paper. It's shown that, improving hole current flowing into P-base region is an important way to suppress snapback phenomenon during forward conducting state. Thus, a new BRT with a floating N-region in N-drift layer is proposed. In this new structure, the floating N-region introduces a hole potential barrier in parasitic PNP to prevent holes front being swept into cathode. Then, almost all of hole current flow into P-base to trigger latch-up effect and the parasitic PNP transistor is greatly suppressed. Thus, snapback is significantly suppressed. Numerical simulation results show that, when doping level and length of floating N-region arc 8.0 x 10(15) cm(-3) and 5.0 mu m, snapback-free can be realized, and pulse discharge performance and turn on characteristics are greatly improved meanwhile the high blocking capability is maintained.
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关键词
base resistance controlled thyristor, floating N-region, snap-back-free, turn-on
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