谷歌浏览器插件
订阅小程序
在清言上使用
VIPCreated with Sketch.
研究兴趣

论文共 349 篇作者统计合作学者相似作者

按年份排序按引用量排序主题筛选期刊级别筛选合作者筛选合作机构筛选
时间
引用量
主题
期刊级别
合作者
合作机构
Temperature Dependency of Non-Equilibrium Body Potential in SOI SBFETs
Tiexin Zhang,Fanyu Liu,Lei Shu, Siyuan Chen,Jiangjiang Li, Yuchong Wang, Yuchen Wu,Jing Wan,Yong Xu,Bo Li, Zhongying Xue,Zhengsheng Han,Tianchun Ye
IEEE Transactions on Electron Devicesno. 99 (2025): 1-8
引用0浏览0EIWOS引用
0
0
Quantification and Mechanism Analysis of Total Ionizing Dose Effect in Top-Gate CNT FETs
Can Yang,Peng Lu, Dong Zhang,Xiaojing Li,Zhengsheng Han,Bo Li
IEEE Transactions on Nuclear Scienceno. 99 (2025): 1-1
引用0浏览0EIWOS引用
0
0
A Novel Asymmetric Trench SiC MOSFET with L-shaped Split Gate for Low Power Consumption and Fast Recovery
Weizhong Chen, Zhijie Deng, Zesheng Chen, Yangqi Zhou,Zhengsheng Han, Zeheng Wang
Journal of Electronic Materialspp.1-12, (2025)
引用0浏览0引用
0
0
A Snapback-Free and Fast-Switching SOI LIGBT with Integrated Double Self-Biased MOSFET
Weizhong Chen, Xiangwei Zeng, Ao Wu, Chen Li,Zhengsheng Han
IEEE Electron Device Lettersno. 99 (2025): 1-1
引用0浏览0EIWOS引用
0
0
An Effective Method to Compensate for Testing Induced SBFET Degradation by Charging Deep-level Interface Trap
Tiexin Zhang,Fanyu Liu,Lei Shu, Siyuan Chen, Yuchong Wang, Yuchen Wu,Jing Wan,Yong Xu, Shi Li, Yuyang Ding,Bo Li,Zhengsheng Han,Tianchun Ye
ieee（2025）
引用0浏览0EIWOS引用
0
0
A Snapback-Free and Low-Loss Reverse Conducting LIGBT with Integrated Multi-functional Trench Gates
Ao Wu,Weizhong Chen, Xiangwei Zeng, Cheng Li,Haishi Wang,Zhengsheng Han
IEICE ELECTRONICS EXPRESSno. 20 (2024)
引用0浏览0EI引用
0
0
加载更多
作者统计

#Papers: 349

#Citation: 1420

H-Index: 23

G-Index: 25

Sociability: 7

Diversity: 3

Activity: 21

  • 合作者
  • 学生
  • 导师
暂无相似学者，你可以通过学者研究领域进行搜索筛选
数据免责声明
页面数据均来自互联网公开来源、合作出版商和通过AI技术自动分析结果，我们不对页面数据的有效性、准确性、正确性、可靠性、完整性和及时性做出任何承诺和保证。若有疑问，可以通过电子邮件方式联系我们：report@aminer.cn