Temperature Dependence of Electrical Characteristics of Strained nMOSFETs Using Stress Memorization Technique

P C Huang,S L Wu,S J Chang,C W Kuo,C Y Chang,Y T Huang,Y C Cheng,Osbert Cheng

Electron Device Letters, IEEE（2011）

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摘要

The temperature dependence of the electrical characteristics of strained nMOSFETs combining stress memorization technique (SMT) process and contact etch-stop layer has been investigated. The observed higher mobility and lower gate tunneling current of SMT devices indicate higher tensile stress in the channel and prove the true transmission of SMT-process-induced stress from the deposited SiN layer. Moreover, as temperature is increased, SMT devices show less deteriorated mobility and increased gate tunneling current, which are due to decreased phonon scattering and increased tunneling barrier height, respectively.

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关键词

mosfet,semiconductor materials,silicon compounds,tunnelling,smt-process-induced stress,sin,contact etch-stop layer,electrical characteristics,gate tunneling current,mobility enhancement,phonon scattering,strained nmosfet,stress memorization technique,temperature dependence,tensile stress,tunneling barrier height,strained nmosfets,stress memorization technique (smt),tunneling,temperature,indexing terms,logic gate,logic gates,stress

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