Huang, Y.C. - Taiwan Semicond. Manuf. Co., Ltd., Hsinchu, Taiwan|c|

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15.7 A 32Mb RRAM in a 12nm FinFet Technology with a 0.0249μm² Bit-Cell, a 3.2GB/S Read Throughput, a 10KCycle Write Endurance and a 10-Year Retention at 105°C

Yi-Cheng Huang, Shang-Hsuan Liu, Hsu-Shun Chen, Hsin-Chang Feng, Chih-Feng Li, Chou-Ying Yang,Wei-Keng Chang,Chang-Feng Yang,Chun-Yu Wu, Yen-Cheng Lin, Tsung-Tse Yang,Chih-Yang Chang,

2024 IEEE International Solid-State Circuits Conference (ISSCC) (2024): 288-290

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15.7 A 32Mb RRAM in a 12nm FinFet Technology with a 0.0249μm 2 Bit-Cell, a 3.2GB/S Read Throughput, a 10KCycle Write Endurance and a 10-Year Retention at 105°C

Yi-Cheng Huang, Shang-Hsuan Liu, Hsu-Shun Chen, Hsin-Chang Feng, Chih-Feng Li, Chou-Ying Yang, Wei-Keng Chang,Chang-Feng Yang,Chun-Yu Wu, Yen-Cheng Lin, Tsung-Tse Yang,Chih-Yang Chang,

IEEE International Solid-State Circuits Conferencepp.288-290, (2024)

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Airgap Integration on Patterned Metal Lines for Advanced Interconnect Performance Scaling

H. K. Chang,H. Y. Huang, T. Y. Lo, S. K. Lee, K. W. Yang, C. L. Tang, Gary Liu,C. T. Wu, M. H. Lin, W. C. Chu, T. J. Kuo, S. K. Fu,

2023 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, IITC AND IEEE MATERIALS FOR ADVANCED METALLIZATION CONFERENCE, MAM, IITC/MAMpp.1-4, (2023)

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Endothiapepsin in 10% DMSO at 298 K

C.Y. Huang, S. Aumonier,M. Wang

crossref（2022）

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First Demonstration of Heterogeneous L-shaped Field Effect Transistor (LFET) for Angstrom Technology Nodes