Tailoring Effect of Enhanced Local Electric Field From Metal Nanoparticles on Electroluminescence of Silicon-Rich Silicon Nitride

Selected Topics in Quantum Electronics, IEEE Journal of(2013)

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摘要
The electroluminescence (EL) wavelength tailoring of silicon-rich silicon nitride (SiNx)-based light-emitting devices (LEDs) is achieved by the modulation of the dimensions of Ag nanoparticles. Two EL peaks are observed in our SiNx-based LEDs, both of which are red shifted with the increasing sizes of Ag nanoparticles. A reasonable explanation on this shift is proposed from the calculation of the local electric field surrounding Ag nanoparticles based on a simple model. This red shift of the two EL peaks as well as the evolution of their relative intensities is mainly originated from its weakening electric field enhancement with the increase of the size of Ag nanoparticles. Our work provides an alternative approach toward the fabrication of SiNx-based LEDs with tunable EL wavelengths.
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el peaks,enhanced local electric field,nanoparticles,wavelength tailoring,silicon-rich silicon nitride (sinx),localized surface plasmons (lsps),electroluminescence,light-emitting devices,full-color display,local electrical field,light-emitting devices (leds),silicon-rich silicon nitride (sin$_{x}$),weakening electric field enhancement,silicon-rich silicon nitride,electroluminescence (el),electric fields,electroluminescence wavelength tailoring,metal nanoparticles,tailoring effect,light emitting diodes,red shift,led
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