Remote Plasma Chemical Vapor Deposition of Silicon Oxycarbide Film with a Styrene-containing Precursor and In situ O2 Plasma Treatment

In this paper, a study was conducted on silicon oxycarbide thin-film deposition using remote plasma chemical vapor deposition. A di-methyldimethoxysilane)2styrene(MDMS)2styrene precursor and CH4 plasma were used in the deposition process, and in situ oxygen plasma treatment was performed to control the carbon content and properties of the thin film. During the deposition process, the thin-film growth rate was found to be almost constant regardless of in situ plasma treatment. This means that in situ oxygen plasma treatment had no significant effect on thin-film growth itself. Auger electron spectroscopy analysis revealed that the carbon content of the deposited thin film was 43% when only deposition was performed, but could be lowered to 3% by in situ oxygen plasma treatment, which demonstrated that the carbon content can be controlled in a relatively wide range. X-ray photoelectron spectroscopy showed that it was possible to preserve Si-C bonds even as the oxygen content increased with the number of in situ plasma treatments. The refractive index increased from 1.33 to 1.49, indicating a decrease in the number of pores and an increase in density. Meanwhile, the dielectric constant increased with the oxygen content, but did not exceed 3.9 due to the Si-C bond structure. As the pore size decreased, the leakage current tended to decrease to 9.51 × 10−9A/cm2 in an electric field of 1 MV/cm, and the breakdown voltage increased. Finally, it was possible to improve the etching characteristic through plasma treatment by lowering the wet etch rate from 78 to 19Å/min.