Facile DUV Irradiated Solution-Processed ZrO $_{\text{2}}$ /In $_{\text{2}}$ O $_{\text{3}}$ for Low Voltages FET Applications

Prime challenges for device integration in metal–oxide semiconductors are low voltage operations, low thermal budget, and large area stable thin films for high-performance field-effect transistors (FETs). Although more, high equipment costs and device scalability issues remain challenges with thin film processing. Henceforth, here we present fully solution-processed thin indium oxide (In $_{\text{2}}$ O $_{\text{3}}$ ) ( $\textit{E}_{\textit{g}}$ $\sim$ 3.2 eV) semiconducting film integrated with high- $\kappa $ ( $\sim$ 14.68) ZrO $_{\text{2}}$ dielectric thin film for high-performance FETs. Top gate bottom contact (TGBC) architecture is optimized for driving low voltage operations, whereas a low thermal budget ( $<$ 300 $^{\circ}$ C) has been made possible with ( $\sim$ 1 min) facile deep-ultraviolet (DUV) ( $\sim$ 254 nm) irradiation. Al/ZrO $_{\text{2}}$ /In $_{\text{2}}$ O $_{\text{3}}$ /Pt/SiO $_{\text{2}}$ /Si FETs operate well below ( $\sim$ 0.5 V), with a high $\textit{I}_{\biosc{on}}$ / $\textit{I}_{\biosc{off}}$ ratio ( $\sim$ 1.1 $\times$ 10 $^{\text{4}}$ ), low subthreshold swing (SS) ( $\sim$ 104 mV/dec), threshold voltage ( $\sim$ $-$ 0.3 V), transconductance ( $\sim$ 1.44 $\mu $ s @ 0.5 V), respectively. The effective field-effect mobility in the linear region is $\sim$ 44.2 cm $^{\text{2}}$ /Vs at $\textit{V}_{\text{DS}}$ $=$ 0.1 V, and in the saturation region is $\sim$ 15.0 cm $^{\text{2}}$ /Vs at $\textit{V}_{\text{DS}}$ $=$ 0.5 V, respectively. The interface trap density $\sim$ 2.5 $\times$ 10 $^{\text{12}}$ /eV cm $^{\text{2}}$ for ZrO $_{\text{2}}$ /In $_{\text{2}}$ O $_{\text{3}}$ was investigated by conductance ( G - V ) technique, also electrical stress investigations were performed for reliability analysis. The gate leakage current is $\sim$ 7.05 nA/cm $^{\text{2}}$ at $\textit{V}_{\text{GS}}$ $=$ 1 V. This work demonstrates the high performance of DUV irradiated solution processed Al/ZrO $_{\text{2}}$ /In $_{\text{2}}$ O $_{\text{3}}$ /Pt thin-film transistor (TFT) structures.