Electrostatic Doping of Electron-Phonon Interaction in 1T-TaTe₂ with an Electric Double Layer Interface

Prominent electron-phonon interactions in transition metal dichalcogenides (TMDCs) play an important role in remarkable charge lattice-modulated structures. 1T '-TaTe2 flakes with the room temperature (RT)- and low temperature (LT)-modulated electronic states and trimerized states have been recently discovered to have a different stacking character and lattice structure. However, the role of carrier doping in the charge-lattice modulation of two-dimensional (2D) materials remains elusive. Here, based on the electron-double-layer (EDL) of the liquid gate, we demonstrated the experimental observation of electric field-induced electron doping-modulated intralayer and interlayer interactions in 1T '-TaTe2 flakes. Remarkable tuning of the Raman modes can be observed by changing the carrier doping of 1T '-TaTe2 (RT-TaTe2) flakes at room temperature. The modulated intralayer and interlayer vibration modes originating from the changing carrier density show a doping-induced electron-phonon interaction and are associated with band structures, which are further verified using first-principles calculations. Such electrical control of charge lattice-modulated structures in an electrical gating geometry provides a new degree of charge-lattice modulation to modify the physical properties in 2D systems.