High-temperature annealing of ((sic)201) -Ga₂O₃ substrates for reducing structural defects after diamond sawing

A commercial epi-ready ((sic)201) beta-Ga2O3 wafer was investigated upon diamond sawing into pieces measuring 2.5 x 3 mm2. The defect structure and crystallinity in the cut samples has been studied by X-ray diffraction and a selective wet etching technique. The density of defects was estimated from the average value of etch pits calculated, including near-edge regions, and was obtained close to 109 cm-2. Blocks with lattice orientation deviated by angles of 1-3 arcmin, as well as non-stoichiometric fractions with a relative strain about (1.0-1.5) x 10-4 in the [(sic)201] direction, were found. Crystal perfection was shown to decrease significantly towards the cutting lines of the samples. To reduce the number of structural defects and increase the crystal perfection of the samples via increasing defect motion mobility, the thermal annealing was employed. Polygonization and formation of a mosaic structure coupled with dislocation wall appearance upon 3 h of annealing at 1100 degrees C was observed. The fractions characterized by non-stoichiometry phases and the block deviation disappeared. The annealing for 11 h improved the homogeneity and perfection in the crystals. The average density of the etch pits dropped down significantly to 8 x 106 cm-2.