High-speed performance self-powered short wave ultraviolet radiation detectors based on ()-Ga₂O₃

High-speed solar-blind short wavelength ultraviolet radiation detectors based on kappa(epsilon)-Ga2O3 layers with Pt contacts were demonstrated and their properties were studied in detail. The kappa(epsilon)-Ga2O3 layers were deposited by the halide vapor phase epitaxy on patterned GaN templates with sapphire substrates. The spectral dependencies of the photoelectric properties of structures were analyzed in the wavelength interval 200-370 nm. The maximum photo to dark current ratio, responsivity, detectivity and external quantum efficiency of structures were determined as: 180.86 arb. un., 3.57 A/W, 1.78 x 10(12) Hz(0.5)center dot cm center dot W-1 and 2193.6%, respectively, at a wavelength of 200 nm and an applied voltage of 1 V. The enhancement of the photoresponse was caused by the decrease in the Schottky barrier at the Pt/kappa(epsilon)-Ga2O3 interface under ultraviolet exposure. The detectors demonstrated could functionalize in self-powered mode due to built-in electric field at the Pt/kappa(epsilon)-Ga2O3 interface. The responsivity and external quantum efficiency of the structures at a wavelength of 254 nm and zero applied voltage were 0.9 mA/W and 0.46%, respectively. The rise and decay times in self-powered mode did not exceed 100 ms.