Conduction mechanism and shallow donor defects in Nb-doped -Ga₂O₃ single crystals

Electrical properties, electronic defects, and photoluminescence (PL) of Nb-doped beta-Ga2O3 crystals grown by the floating zone method have been studied in the temperature range from 10 to 350 K. The activation energies of shallow and deep traps were obtained and compared with their counterparts. The 0.25-Nb-doped Ga2O3 crystal has a metallic behavior at room temperature and a semiconducting behavior at low temperatures. This behavior was interpreted by the quantum corrections to the electrical resistivity resulting from the weak localization and Coulomb interaction. In addition, the 0.25-Nb-doped Ga(2)O(3)crystal has a shallow donor ionization energy of 0.03 eV, indicating that it requires less energy to enable n-type conductivity. Hence, Nb is a good choice for improving the electrical conductivity of the beta-Ga2O3 crystal. Three defect trap states were found at EC-0.81 eV, EC-0.49 eV, and EC-0.12 eV below the conduction band edge. The PL spectra of the undoped sample show two characteristic bands in the UV and blue regions under the excitation wavelength of 256 nm. On the other hand, in the Nb-doped beta-Ga2O3 sample, a novel UV emission band with a shorter wavelength was observed.