Study on the effects of Si-doping in molecular beam heteroepitaxial -Ga₂O₃ films

beta-Ga(2)O(3)3, an emerging wide bandgap semiconductor material, holds significant potential for various applications. However, challenges persist in improving the crystal quality and achieving controllable doping of beta-Ga2O3. In particular, the relationship between these factors and the mechanisms behind them are not fully understood. Molecular beam epitaxy (MBE) is viewed as one of the most sophisticated techniques for growing high-quality crystalline films. It also provides a platform for studying the effects of doping and defects in heteroepitaxial beta-Ga2O3. In our study, we tackled the issue of Si source passivation during the MBE growth of Si-doped beta-Ga2O3. We did this by using an electron beam vaporize module, a departure from the traditional Si effusion cell. Our research extensively explores the correlation between Si doping concentration and film properties. These properties include microstructure, morphology, defects, carrier conductivity, and mobility. The results from these investigations are mutually supportive and indicate that a high density of defects in heteroepitaxial beta-Ga(2)O(3)3 is the primary reason for the challenges in controllable doping and conductivity. These insights are valuable for the ongoing development and enhancement of beta-Ga2O3-based device techniques. (c) 2024 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution-NonCommercial 4.0International (CC BY-NC) license (https://creativecommons.org/licenses/by-nc/4.0/)