Effect of low-temperature annealing on electric resistivity and mechanical anisotropy of Al-Si binary alloy fabricated by laser-powder bed fusion

Al-12mass%Si binary alloy was fabricated by laser-powder bed fusion (L-PBF). The effect of low temperature annealing (LTA) less than 573 K on electrical and mechanical properties, microstructure, and residual stress of L-PBF Al-12mass%Si was investigated. Due to LTA, electrical resistivity at 77 K and 293 K changed from 34 n Omega m down to 10 n Omega m and from 68 n Omega m down to 45 n Omega m, respectively. The lattice constant of alpha-Al phase increased around 0.0005 nm by LTA according to X-ray diffraction. The change was associated with the decrease in the concentration of solid-solution Si of around 3.4 mass% by electrical resistivity measurement and 3 mass% by X-ray diffraction, when the annealing temperature was 473 K. Whereas, Vickers hardness increases around 145 HV compared with that for the as-built value of 141 HV, and then, decreases down to 126 HV and saturates. TEM/EDS observations confirmed the precipitation of fine Si within the alpha-Al phase. The decrease in annealing temperature increases the time to reach the Vickers hardness peak. 0.2% proof stress obtained by compression tests shows anisotropy, which can be attributed to the anisotropy on residual stress, which still exists after LTA.