8-inch Wafer-scale Epitaxial Monolayer MoS2.

Large-scale, high-quality, and uniform monolayer MoS2 films are crucial for their applications in next-generation electronics and optoelectronics. Epitaxy is a mainstream technique for achieving high-quality MoS2 films and has been demonstrated at a wafer scale up to 4-inch. In this study, we report the epitaxial growth of 8-inch wafer-scale highly oriented monolayer MoS2 on sapphire with excellent spatial homogeneity, using a specially designed vertical chemical vapor deposition (VCVD) system. Field effect transistors (FETs) based on the as-grown 8-inch wafer-scale monolayer MoS2 film were fabricated and exhibited high performances, with an average mobility and an on/off ratio of 53.5 cm2V-1s-1 and 107, respectively. In addition, batch fabrication of logic devices and 11-stage ring oscillators were also demonstrated, showcasing excellent electrical functions. Our work may pave way of MoS2 in practical industry-scale applications. This article is protected by copyright. All rights reserved.