Ultraviolet photodetectors based on wide bandgap semiconductor: a review

Ultraviolet (UV) photodetectors (PDs) are effective devices that convert UV radiation energy into electrical signals, and they are widely used in aerospace, chip manufacturing and other fields. At present, the design and manufacture of UV PDs based on wide bandgap semiconductor materials is also an important branch of optoelectronics technology. Wide bandgap semiconductor materials with strong UV absorption, high carrier mobility, exciton binding energy, and temperature resistance, have become ideal materials for fabricating high-performance UV PDs. Meanwhile, some novel materials have also been found to be suitable for the fabrication of UV optoelectronic devices in recent years, such as chalcogenide materials, double-layer hydroxide materials, and graphene-based materials. In this review, the research progress performance parameters, structures and commonly used materials of UV PDs is systematically introduced. In addition, the methods for optimizing device performance based on various property effects of materials are discussed in detail. The broad research prospect of some novel materials and corresponding application in UV PDs are explored, which provide a reference for future research and development of UV PDs.