Active Probe Card for Multi-Parameter Fast Characterization of Mems Gyroscope at Wafer-Level

This paper proposes a versatile and efficient tool for MEMS gyros offering multi-parameter concerned by both manufacturer and customer at the wafer-level. Two active probe cards (APCs) measure the gyros' static (capacitance and resistance) and dynamic parameters (frequencies, Q-factors, etc) as well as predicted system-level performance (zero-rateoutput (ZRO), zero-quadrature-output (ZQO), etc). The process monitoring parameters and customer-concerned device operating parameters and behaviors under diverse applications with specific Af are automatically extracted from two sequential tests with different voltage loads within 10s per die. System-level characteristic parameters are revalidated, and the gyro's bias-instability (BIS) is also tested after dicing and packaging. The experimental results suggest the proposed APCs could facilitate the best working die selection and system-level performance pre-validation for different application scenarios (e.g., northfinding), at the wafer level.