Numerical simulation of bonding wire lift-off of IGBT under power cycling

As a key component of power electronic devices, the reliability of insulated gate bipolar transistor (IGBT) modules has attracted widespread attention. The bond wires lift-off is the primary mode of failure of IGBT modules, and it results in a change in the electrothermal characteristic parameters, including current density, turn-on voltage, and temperature. So, this paper investigates the impact of bonding wires lift-off on electrothermal characteristic parameters of IGBT module. Firstly, A simplified IGBT FE (Finite Element) model was established. And electro-thermal analysis is simulated under the power cycle conditions. The birth and death element technique were then used to build these FE models with various numbers of bond wires. The results of the simulations of these models' electrothermal characteristic parameters were independently recorded. Finally, analyzed the electrothermal characteristic parameters of IGBT module for different models. The analysis results show that the current density on the chip-3, the maximum temperature and turn-on voltage show a significant increase with increase of bonding wire lift-off. Compared to the initial state of no wire-bond break, the turn-on voltage increases by 6.66% when the seven bond wires are broken. It provides some valuable guidance for further study on the reliability of the bond-wire.