Achieving Reconfigurable Excitatory-Inhibitory Response in Unipolar Synaptic Memtransistors by the Synergistic Effects of Electric Double Layer and Charge Trapping

Mimicking the concomitant and independently expressed excitatory-inhibitory response in one unipolar synaptic transistor is desirable but remains a significant challenge. Here, this study employs a dual-mechanism approach in designing a memtransistor to achieve unipolar spike voltage-dependent plasticity (USVDP). The transition of synaptic excitation and inhibition depends on the amplitude rather than the polarity of the applied voltage, arising from the dynamic competition between the electric double-layer (EDL) and charge-trapping effects. The reconfigurable characteristic of the memtransistor remains stable for 1000 consecutive hysteresis loops. Our research highlights the coupling of EDL and charge-trapping effects for reconfigurable neuromorphic systems.