Microscopic Insights into Fatigue Mechanism in Wurtzite Ferroelectric Al_0.65Sc_0.35N: Oxygen Infiltration Enabled Grain Amorphization Spanning Boundary to Bulk
arxiv(2024)
摘要
For the first time, the fatigue behavior involving external oxygen in highly
Sc-doped AlN ferroelectric film was observed using transmission electron
microscope techniques. Despite increasing the Sc composition in AlScN film
contributes to reducing the device operation voltage, the inherent affinity of
Sc for oxygen introduces instability in device performance. In this study,
oxygen incorporation at top electrode edges and grain boundaries accompanied
with an increase in current leakage and the disappearance of ferroelectric
properties, was observed in nanoscale after long-term field cycling. This
observation indicates the emergence of non-ferroelectric and even amorphous
states. This presented work revealed solid experimental evidence of an
oxygen-involved fatigue mechanism, providing valuable insights into the
physical nature of the ferroelectric properties of AlScN films.
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