Nernst effect of high-mobility Weyl electrons in NdAlSi enhanced by a Fermi surface nesting instability
Physical Review X(2024)
摘要
The thermoelectric Nernst effect of solids converts heat flow to beneficial
electronic voltages. Here, using a correlated topological semimetal with high
carrier mobility μ in presence of magnetic fluctuations, we demonstrate an
enhancement of the Nernst effect close to a magnetic phase transition. A
magnetic instability in NdAlSi modifies the carrier relaxation time on
'hotspots' in momentum space, causing a strong band filling dependence of
μ. We quantitatively derive electronic band parameters from a novel
two-band analysis of the Nernst effect S_xy, in good agreement with quantum
oscillation measurements and band calculations. While the Nernst response of
NdAlSi behaves much like conventional semimetals at high temperatures, an
additional contribution Δ S_xy from electronic correlations appears
just above the magnetic transition. Our work demonstrates the engineering of
the relaxation time, or the momentum-dependent self energy, to generate a large
Nernst response independent of a material's carrier density, i.e. for metals,
semimetals, and semiconductors with large μ.
更多查看译文
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要