Thermoelectric Properties of Single-Phase n-Type Bi14Te13S8

Raphael Fortulan, Sima Aminorroaya Yamini, Azib Juri,Illia Serhiienko,Takao Mori

ACS APPLIED ELECTRONIC MATERIALS(2024)

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摘要
Bismuth telluride (Bi2Te3) and its alloys are among the best thermoelectric materials at room temperature. Bi14Te13S8, a material with a similar crystal structure, contains sulfur that can potentially improve the thermoelectric performance through widening the band gap and reducing the lattice thermal conductivity. This compound forms in sulfur-added Bi2Te3 alloys. Here, a polycrystalline iodine-doped Bi14Te13S8 sample is investigated; an optimum iodine concentration of 1 at. % resulted in the power factor of 3.5 mW(2)m(-1)K-1 at room temperature. Iodine doping reduced the lattice thermal conductivity by more than 30% by enhancing the phonon scattering. An improved thermoelectric figure of merit zT of similar to 0.29 at 520 K was obtained for 1-1.5 at. % iodine-doped Bi14Te13S8. First-principles calculations indicate that Bi14Te13S8 has a larger band gap compared to bismuth telluride, which allows for a reduction in the bipolar effect; however, a lower effective mass reduced the thermopower for a similar carrier concentration. This study demonstrates that tuned iodine doping can effectively optimize the thermoelectric performance of Bi14Te13S8, highlighting its contribution in multiphase sulfur-alloyed Bi2Te3-based materials.
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关键词
Bi2Te3,thermoelectricproperties,Bi14Te13S8,sulfur,band gap,thermal conductivity,iodine,n-type
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