Realization of 1.54 m electroluminescence via silicon-based erbium-doped SnO₂ film devices

1.54 mu m telecom-wavelength electroluminescence is achieved by erbium-doped SnO2 film devices fabricated on silicon wafers. Employing fluorine as a co-dopant, the electroluminescence intensity is increased due to enhanced electrical injection of the device and improved optical activity of the erbium ions. The realization of electroluminescence can be ascribed to the inelastic impact with erbium ions through the hot electrons originating from different electrical conduction mechanisms, by controlling the SiOx interlayer thickness. Herein, the device based on the co-doped film presents a low turn-on voltage of 4.4 V. Via further regulating the annealing condition, the co-doped device obtains a maximum optical power density of 92.2 mu W/cm(-2) at 1.55 mu m, with an operating lifetime of more than 190 h in the atmosphere. This work clarifies the broad application prospects for SnO2 devices in silicon photonics technology.