Radiation Effects on Scientific CMOS Detectors for X-ray Astronomy: II. Total Ionizing Dose Irradiation
arxiv(2024)
摘要
Complementary metal-oxide-semiconductor (CMOS) detectors are a competitive
choice for current and upcoming astronomical missions. To understand the
performance variations of CMOS detectors in space environment, we investigate
the total ionizing dose effects on custom-made large-format X-ray CMOS
detectors. Three CMOS detector samples were irradiated with a Co-60 source with
a total dose of 70 krad and 105 krad. We test and compare the performance of
these detectors before and after irradiation. After irradiation, the dark
current increases by roughly 20 to 100 times, and the readout noise increases
from 3 e- to 6 e-. The bias level at 50 ms integration time decreases by 13 to
18 Digital Number (DN) at -30 degree. The energy resolution increases from
about 150 eV to about 170 eV at 4.5 keV at -30 degree. The conversion gain of
the detectors varies for less than 2
are about 50 pixels whose bias at 50 ms has changed by more than 20 DN after
the exposure to the radiation and about 30 to 140 pixels whose readout noise
has increased by over 20 e- at -30 degree at 50 ms integration time. These
results demonstrate that the performances of large-format CMOS detectors do not
suffer significant degeneration in space environment.
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