Space–Charge‐Limited Photocurrent as a Possible Cause for Low Power Conversion Efficiency in GaInN/GaN‐Based Optoelectronic Semiconductors

This study attempts to understand the cause of low power conversion efficiency (PCE) in III‐nitride optoelectronic semiconductors under optical operation. For this purpose, a GaInN/GaN heterojunction semiconductor is fabricated, and the photoexcited current–voltage (PEJV) curves are carefully measured depending on the optical excitation power and temperature. The results show unexpected excitation power‐ and temperature‐dependent behaviors, that is, the PCE decreases with increasing excitation power and increases with increasing temperature. To understand this, the space–charge‐limited photocurrent (JPh,SCL) theory (also referred to as Goodman and Rose theory) is employed, where the accumulated charge carriers in the active layer play a significant role. The conduction of JPh,SCL is ascertained by analyzing the PEJV curves. The conduction of JPh,SCL is investigated as a possible cause of the low PCE, revealing that the conduction of JPh,SCL could limit the high‐power operation of the device.