Revisiting phonon thermal transport in two-dimensional gallium nitride: higher-order phonon-phonon and phonon-electron scattering
arxiv(2024)
摘要
Two-dimensional gallium nitride (2D-GaN) has great potential in power
electronics and optoelectronics. Heat dissipation is a critical issue for these
applications of 2D-GaN. Previous studies showed that higher-order phonon-phonon
scattering has extremely strong effects on the lattice thermal conductivity of
2D-GaN, which exhibits noticeable discrepancies with lattice thermal
conductivity calculated from molecular dynamics. In this work, it is found that
the fourth-order interatomic force constants (4th-IFCs) of 2D-GaN are quite
sensitive to atomic displacement in the finite different method. The effects of
the four-phonon scattering can be severely overestimated with non-convergent
4th-IFCs. The lattice thermal conductivity from three-phonon scattering is
reduced by 65.6
significantly more four-phonon processes than three-phonon processes. It was
previously thought the electron-phonon interactions have significant effects on
the lattice thermal conductivity of two-dimensional materials. However, the
effects of phonon-electron interactions on the lattice thermal conductivity of
both n-type and p-type 2D-GaN at high charge carrier concentrations can be
neglected due to the few phonon-electron scattering channels and the relatively
strong four-phonon scattering.
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