Enhanced photoemission of InGaN nanopore array photocathode with light capture effect

In order to make full use of solar energy, the InGaN nanopore array photocathode structure is proposed. The light capture and photoemission properties of nanopore arrays are investigated under various conditions, including hole depth, filling ratio, oblique incident light, and applied electric field. The results show that compared with thin films, nanopore arrays have better light capture ability. With the hole depth of 500 nm, period of 200 nm, filling ratio of 0.5 and incident angle of 15 degrees, the maximum quantum efficiency and collection efficiency of nanopore arrays are 79 % and 30 %, respectively. Oblique incident light and external electric field play important roles in improving the performance of photocathodes. The design principles presented in this work provide guidance for the reasonable parameters of photocathode applied to solar photocathode.