An efficient catalytic composite abrasive cluster with excellent catalytic and micro-cutting capabilities in the friction chemical polishing processes

This paper selects a self-made catalytic composite abrasive cluster (CCAC) to friction chemical polishing of 6HSiC, and the reaction mechanism between CCAC and SiC was investigated. A comparison of dry friction chemical polishing using W3.5 single crystal diamond (W3.5SCD), W14 single crystal diamond (W14SCD), composite abrasive cluster (CAC) and CCAC to investigate the material removal mechanism of CCAC. By analyzing the changes in material removal rate and surface quality during friction chemical polishing, the effect of CCAC morphology changes on processing performance during the polishing process was explored. The effect of oxidizers on SiC during the polishing process was analyzed by detecting the changes of elements on the surface of SiC wafers after polishing. The results showed that the material removal rate of CCAC for SiC was 250.934 nm/ min, which was twice as high as that of W14SCD with the same particle size, and improved by 24.1 % compared to CAC, and the surface roughness was lower. CCAC has oxygen generation when processing SiC wafers, which promotes shear film on the surface of SiC that can be easily removed, allowing the material removal rate to be improved.