Independent enhancement of the in-plane Seebeck effect in 2D PtSe2/PtSe2 homostructures via a facile interface tuning method

Atomically thin two-dimensional (2D) transition-metal dichalcogenide (TMDC) films have emerged as promising semiconducting materials for use in thermoelectric (TE) applications. However, the utilization of such materials remains challenging owing to the relatively high intrinsic resistance as the size of the TMDC thin films increases to the centimeter scale. These 2D TMDC films can also form vertically stacked homo- or heterostructures at large interfaces with other 2D TMDC films, resulting in unique TE properties at room temperature. This article reports on the in-plane TE properties when the interfaces formed within a PtSe2/PtSe2 (3 nm/3 nm) homostructure are modulated as a function of O2 plasma treatment time. The results show enhanced Seebeck coefficients compared with that of the single-layer PtSe2 with the same thickness. The independent enhancement in the Seebeck coefficient while keeping the electrical conductivity leads to a substantial increase in the power factor. Such extra Seebeck voltage in 2D PtSe2/PtSe2 homostructures is mainly as a result of momentum exchange by charge carriers caused by the temperature gradient in the vertical direction, which occurs in-plane Seebeck coefficient measurements, at the interface between the PtSe2 layers in the in-plane temperature gradient along the samples. These results resemble the characteristics of the phonon drag effect at low temperatures, which can independently increase the Seebeck coefficient at room temperature.