Investigation of the Features of High-Intensity Implantation of Nitrogen Ions into Titanium

The article presents the results of studies of the features and regularities of high-intensity nitrogen ion implantation into titanium using repetitively-pulsed beams with high average power densities. It is shown that the method of low-energy high-intensity nitrogen ion implantation at current densities of 180, 140, 60, and 10 mA/cm 2 makes it possible to obtain wide ion-doped layers in titanium. The regularities of changes in both thickness and elemental composition of ion-doped layers depending on the ion current density have been established. It has been established that a wide diffusion layer is observed at ion current densities from 60 to 180 mA/cm 2 . Nitrogen concentration in the diffusion layer increases with an increase in the ion current density. The article presents the transmission electron microscopy data showing that the modified layers at a depth of 10 μm consist of α-Ti, in the volume of which nanosized particles of δ-TiN with average size of 15.4 nm crystallize.