Experimental investigation on axial ultrasonic-assisted grinding of different crystal surfaces of single-crystal gallium oxide

Gallium oxide is a semiconductor material with notable optoelectronic properties and thermal stability, with potential applications in optoelectronics, aerospace, and new energy sources, among others. Nevertheless, due to its high hardness and brittleness, gallium oxide poses challenges in efficient processing. The conventional grinding of gallium oxide often results in compromised surface quality accompanied by cracks and defects. In this study, we compared the outcomes of conventional grinding (CG) and axial ultrasonic-assisted grinding (AUVAG) on the (100) and (010) planes of single-crystal β-Ga 2 O 3 material to investigate the grinding performance of the β-Ga 2 O 3 surface. With the inclusion of axial ultrasound, the grinding force, grinding force ratio, and surface roughness of the (100) plane decreased by 12.39%, 8.71%, and 21.14%, respectively. The (010) plane showed reductions of 25.36%, 18.65%, and 15.68%, respectively. Moreover, we explored the influence of process parameters, including wheel grinding speed, feed rate, grinding depth, and ultrasonic amplitude, on the grinding force and surface roughness through orthogonal tests. The optimal process combination was identified under the current test parameters. The findings revealed that the grinding force, grinding force ratio, and surface roughness of different crystalline planes of β-Ga 2 O 3 were reduced to varied extents, enhancing surface quality in comparison to conventional grinding. Notably, the (010) plane of β-Ga 2 O 3 demonstrated superior grinding performance compared to the (100) plane. The insights from this study offer valuable guidance for refining the grinding techniques and processes of single-crystal β-Ga 2 O 3 material.