Reliable Memristive Switching Empowered by Ag/NiO/W ReRAM Configuration for Multi-Level Non-Volatile Memory Applications

Resistive random-access memories (ReRAM) are promising candidates for next-generation non-volatile memory, logic components, and bioinspired neuromorphic computing applications. The analog resistive switching (RS) tuning with a sizable memory window is crucial for realizing multi-level storage devices. This work demonstrates the multi-level storage capability of fabricated Ag/NiO/W ReRAM architecture, controlled through voltage modulations. The fabricated ReRAM structures exhibit stable bipolar analog RS, non-overlapping resistance, and endurance of approximate to 104 cycles, respectively, with marginal statistical variations/fluctuations. Also, the fabricated ReRAM offers highly controlled and stable retention characteristics tested up to approximate to 104 s with significantly controlled statistical variations/fluctuations. Adjacent thereto, it offers a substantially lower operating SET and RESET voltage of 1 and -1 V, respectively. Moreover, the non-overlapping multiple resistive states are observed with the voltage pulse modulation schemes. Furthermore, the current switching mechanism is described using a model proposed for the conductive filament growth and the contribution of the NiO/W interface layer (IL) toward notable RS of fabricated Ag/NiO/W structures. NiO-based electrochemical metallization (ECM) resistive random-access memories are employed with Tungsten metal (W) as the bottom electrode (BE) that contributes to the induction of the WOy interface layer (IL) at the NiO/W interface, facilitating significantly stable, voltage-controlled multi-level analog switchings with substantially minimal statistical variations (sigma/mu) percentage.image