Bi-Ligand Synergy Enables Threshold Low Voltage and Bandgap Stable Pure-Red Mix-Halide Perovskite LEDs

Hong-Wei Duan, Feng Zhao, Sheng-Nan Li,Jia-Lin Pan, Wan-Shan Shen, Sheng-Ming Li,Qiao Zhang, Ya-Kun Wang,Liang-Sheng Liao

ADVANCED FUNCTIONAL MATERIALS(2024)

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摘要
Perovskite light-emitting diodes (LEDs) emitting in the pure-red range of 630-640 nm show promise in meeting the requirement of the Rec.2100 standard for high-resolution displays. However, the high-performing LEDs (external quantum efficiency, EQE >20%) in the pure-red range suffer from half-life time (luminance drop to 50% of the initial luminance) of <1.6 h, resulting from the injection/transportation barrier and surface-defects-induced charge carrier quenching. Herein, a bi-ligand synergy strategy is developed to address the T-50 issue: the introduction of iodide-rich ligands with different chain length increases the vacancy formation energy of halogen ions and enhances the exciton binding energy, resulting in a high photoluminescence quantum yield of over 92%. The treated CsPbBrx/I(3-x )films exhibit 34-fold improved material stability related to the control at continuous aging at 100 degrees C. As a result, pure-red LEDs with CIE coordinates of (0.698, 0.301) approaching the Rec.2100 standard are reported. These pure-red LEDs exhibit a low turn-on voltage of 1.8 V, which is the lowest among reported pure-red perovskite LEDs, and even 0.15 V lower than the optical bandgap energy (1.95 eV); and a maximum EQE of approximate to 21% with fourfold enhanced T-50 relative to the best previous pure-red perovskite LEDs.
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关键词
bi-ligand,defects passivation,light-emitting diode,perovskite quantum dots,pure red
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