Wake-Up of Ultrathin Ferroelectric Hf0.5 Zr0.5 O2 : The Origin and Physical Modeling
2023 International Electron Devices Meeting (IEDM)(2023)
摘要
The wake-up procedure that demands prolonged time and a high electric field poses a significant obstacle to the aggressive scaling of the ferroelectric (FE) Hf
0.5
Zr
0.5
O
2
(HZO) thickness. A comprehensive understanding of its origin is thus imperative. A new mechanism, referred to as interfacial-layer soft breakdown (IL-SBD), is proposed to elucidate the wakeup behavior in the ultrathin HZO capacitor. Compelling experimental evidence is presented to support the critical role of IL and its SBD. A multi-domain FE wake-up model is developed that incorporates defect generation, trap-assisted tunneling within the IL, and charge screening at the IL/HZO interface. Remarkably, this model accurately reproduces the trend of thickness-dependent wake-up behavior, emphasizing the utmost significance of IL optimization in ultrathin HZO.
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关键词
Ferroelectric Hf0,Gene Defects,Charge Screening,Phase Transition,Low Voltage,Pulse Width,Voltage Drop,Effective Screening,Ferroelectric Materials,Pristine State,Ferroelectric Domain,Pre-existing Defects,Polarization Density,Bipolar Switching,Image Charge
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