In situ fabrication of lanthanum-doped nickel oxide nanostructures using sol-gel for the degradation of rhodamine B

Nanoscale science represents a thriving field of research for environmental applications within materials science. This study focuses on the fabrication of pure and La-doped nickel oxide (NiO) nanostructures with varying concentrations (1.0, 2.0, 3.0, and 4.0 wt%) of lanthanum using a facile sol-gel technique. This study explores the structural, morphological, chemical composition, and optical characteristics of the resulting pure and La-doped NiO nanostructures. Techniques such as X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray (EDX) spectroscopy, UV-visible spectroscopy, and photoluminescence (PL) spectroscopy were used for material analysis. The observed trend in the energy band gap (E-g) values demonstrates a continuous decrease up to a La-doping concentration of 3 wt% in NiO. However, after this concentration (at 4.0 wt%), there is a noticeable increase in the energy band gap. At lower La-doping concentrations (up to 3 wt%), the incorporation of La ions into the NiO lattice may result in the formation of defects and oxygen vacancies. The presence of these imperfections may lead to new energy levels into the band gap, resulting in partial filling and a subsequent reduction in the band gap. Beyond a specific doping concentration (e.g., 3 wt%), excess La atoms may aggregate or cluster inside the NiO lattice. This agglomeration may cause structural distortions, strain, and disturbances in the crystal lattice, resulting in an increase in the band gap. The 3 wt% La-doped NiO sample demonstrated a notable 84% degradation efficiency of the synthesized nanomaterials coupled with its inherent stability, highlighting its dual attributes of effective pollutant removal and sustained performance. Furthermore, the cyclic stability of the optimized nanostructure is anticipated to be similar to 77.42% after six cycles, suggesting promising future applications in photocatalysis.