Improving dv /dt Immunity of Reverse Blocking IGCT for Hybrid Line-commutated Converter
IEEE Transactions on Power Electronics（2024）
摘要
The d
v
/d
t
induced turn-on is an undesirable triggering event of integrated gate-commutated thyristor (IGCT). In this letter, we aim to improve the d
v
/d
t
immunity of the IGCT in the hybrid line commutated converter (H-LCC), which is a newly proposed topology that can reduce the commutation failure probability. Firstly, the mechanism of the d
v
/d
t
induced turn-on is revealed. Secondly, it is proved evidentially that both the d
v
/d
t
applied time and the temperature significantly impact the d
v
/d
t
immunity. Thirdly, three distinct snubber topologies to improve the d
v
/d
t
immunity are proposed and compared based on the above analysis. It is experimentally demonstrated that the topology comprising a capacitor, resistor and normally-on JFETs is the most effective; the d
v
/d
t
immunity at 50 ℃ is improved from 144 V/μs to 655 V/μs when the d
v
/d
t
applied time is 5 μs, satisfying all requirements of the H-LCC successfully.
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关键词
reverse blocking integrated gate commutated thyristor,line-commutated converter,dv/dt immunity
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