Layout Design for DNTT-based Organic TFTs Considering Fringe Leakage Current
IEEE Journal on Flexible Electronics（2024）
摘要
Dinaphtho[2,3-
b
:2’,3’-
f
]thieno[3,2-
b
]thiophene (DNTT) is recognized for its excellent carrier mobility and stability, which makes it a popular choice for p-type organic semiconductors in thin-film transistors (TFTs) for flexible electronics. Practical applications of DNTT-based organic TFTs (OTFTs) have revealed that their leakage currents are significantly layout-dependent. In this paper, we propose and evaluate three OTFT layouts with different layer-contact combinations to assess the leakage current characteristics. Among the proposed layouts, two exhibit noticeable leakage currents, one in the gate insulator and the other in the organic semiconductor fringe; the third layout successfully reduces these leakage currents. Our results indicate that the layout exhibiting the fringe leakage current is well suited for use as a pseudo-resistive device with tunable resistance, while the layout with the high on-off current ratio is suitable for use as a switching device. Based on our measurement results, we propose a fringe leakage current model for designing efficient OTFT circuits. We analyze the transfer characteristics of pseudo-CMOS logic gates with various pull-down network layouts to demonstrate application as a pseudo-resistive device. Our results show that the pull-down network with the pseudo-resistive device effectively controls the output voltage swing, thereby enhancing the stability of OTFT-based circuits.
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