Monolayer Mo_1-x-yRexW_yS₂-Based Photodetectors Grown by Chemical Vapor Deposition

The utilization of alloyed 2D transition metal dichalcogenides (TMDs) has become a pivotal approach for addressing challenges in material applications. The judicious selection of dopant constituents offers a potent means to finely modulate the materials' bandgap, consequently broadening the potential applications of 2D materials. In the context of an investigation, Mo1-x-yRexWyS2 is successfully synthesized using chemical vapor deposition. With a bandgap of 1.33 eV, this material exhibits promising prospects for application in the realm of optoelectronics. This advancement enables the fabrication of the Mo1-x-yRexWyS2 photodetector. The rigorous testing and analysis of photoelectric performance reveal significant improvements in both responsivity and response speed compared to analogous detectors. This accomplishment not only furnishes a novel paradigm for the advancement of photodetectors but also contributes fresh insights to the domain of alloyed 2D TMDs.