High Gain Graphene Based Hot Electron Transistor with Record High Saturated Output Current Density

Hot electron transistors (HETs) represent an exciting new device for integration into semiconductor technology, holding the promise of high-frequency electronics beyond the limits of SiGe bipolar hetero transistors. With the exploration of 2D materials such as graphene and new device architectures, hot electron transistors have the potential to revolutionize the landscape of modern electronics. This study highlights a novel hot electron transistor structure with a record output current density of 800 A cm-2 and a high current gain alpha, fabricated using a scalable fabrication approach. The hot electron transistor structure comprises 2D hexagonal boron nitride and graphene layers wet transferred to a germanium substrate. The combination of these materials results in exceptional performance, particularly in terms of the highly saturated output current density. The scalable fabrication scheme used to produce the hot electron transistor opens up opportunities for large-scale manufacturing. This breakthrough in hot electron transistor technology holds promise for advanced electronic applications, offering high current capabilities in a practical and manufacturable device. In this study, a novel hot electron transistor design with a metal-insulator-graphene-semiconductor structure is developed. A record high output current density of 800 A cm- 2 and a high current gain of 0.87 are achieved. Thereby, limitations of previous devices, such as no current saturation or a low VCB window, are overcome.image